| PART |
Description |
Maker |
| BR93A46RFJ-W BR93A46FJ-W BR93A46F-W BR93A46RF-W BR |
Microwire BUS 1Kbit(64 x 16bit) EEPROM
|
ROHM[Rohm]
|
| BR93L66-W BR93L66F-W BR93L66FJ-W BR93L66FV-W BR93L |
Microwire BUS 4Kbit(256 x 16bit) EEPROM
|
Rohm
|
| BR93L86RFVT-W BR93L86FJ-W BR93L86F-W BR93L86RFJ-W |
Microwire BUS 16Kbit(1,024 x 16bit) EEPROM
|
ROHM[Rohm]
|
| K4S641632C K4S641632C-TC_L70 K4S641632C-TC_L80 K4S |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 125MHz
1M x 16Bit x 4 Banks Synchronous DRAM
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 166MHz
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| BR24L64FJ-WE2 BR24L02FVM-WTR BR24L04NUX-WTR BR24L0 |
I2C BUS 64Kbit(8192x8bit) EEPROM
I2C BUS 2Kbit(256x8bit) EEPROM
I2C BUS 4Kbit(512x8bit) EEPROM
I2C BUS 1Kbit(128x8bit) EEPROM
I2C BUS 8Kbit(1024x8bit) EEPROM
I2C BUS 16Kbit(2048x8bit) EEPROM
I2C BUS 32Kbit(4096x8bit) EEPROM
|
ROHM
|
| A42L0616S-45L A42L0616S-50L A42L0616S-60 A42L0616S |
45ns 1M x 16bit CMOS dynamic ram with EDO page mode
50ns 1M x 16bit CMOS dynamic ram with EDO page mode
60ns 1M x 16bit CMOS dynamic ram with EDO page mode
|
AMIC Technology
|
| KM416C1004CJ-5 KM416C1004CJ-6 KM416C1004CJL-6 KM41 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh
|
Samsung Electronic
|
| TB62701N E004109 |
16BIT SHIFT REGISTER / LATCH & CONSTANT CURRENT DRIVERS
16BIT SHIFT REGISTER, LATCH & CONSTANT CURRENT DRIVERS
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| TB62706BFG TB62706BNG |
16BIT SHIFT REGISTER
|
Toshiba
|
